* RDS(on)=16mΩ@VGS=10V, ID=20A
* RDS(on)=25mΩ@VGS=4.5V, ID=20A
* Advanced trench process technology
* High Density Cell Design for Ultra Low On-Resistance.

or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or.

N-Channel Enhancement-Mode MOSFET

H4001

H4005

H4006

H40517MN

H40518MN

H40519MN

H40519MN-R

H40520MN

H40520MN-R

H40521MN

H40522MN

H40528MN

H40528MN-R

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